An analysis of small-signal gate-drain resistance effect on RF power MOSFETs.
The anomalous dip in scattering parameter S11 of RF power MOSFETs with drain-to-spacer offset is explained quantitatively for the first time. Our results show that, for RF power MOSFETs, the input impedance can be represented by a simple series RC circuit at low frequencies and a "shifted"...
| Julkaisussa: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Päätekijä: | |
| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
| Aiheet: |