Si and Zn co-doped InGaN-GaN white light-emitting diodes.

InGaN-GaN double heterostructure (DH) and multiquantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wavelength donor-acceptor (D-A) pair-related emis...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Chang, S.J
Format:	Article
Language:	English
Subjects:	500 to 560 nm. DH LED. InGaN-GaN white light emitting diode. InGaN-GaN:Si. Zn. MQW LED. Si/Zn co-doping. Band-edge blue emission. Breakdown voltage. Color coordinates. Color rendering index. Color temperature. Donor-acceptor pair emission. Forward voltage. Metalorganic chemical vapor deposition.