Kong-Beng Thei. A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationKong-Beng Thei. "A New and Improved Structure of Polysilicon Resistor for Subquarter Micrometer CMOS Device Applications." IEEE Transactions on Electron Devices .
MLA (9th ed.) CitationKong-Beng Thei. "A New and Improved Structure of Polysilicon Resistor for Subquarter Micrometer CMOS Device Applications." IEEE Transactions on Electron Devices, .
Warning: These citations may not always be 100% accurate.