Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.

Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.

We have demonstrated the effects of charging voltage and the charge retention characteristics in silicon-germanium dots with ZrO2 tunneling oxide. Using the ZrO2 high-k dielectric tunneling oxide, we achieved a low write voltage and improved retention time as compared to the SiGe dots with a SiO2 t...

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Detalles Bibliográficos
Publicado en:IEEE Transactions on electron devices 50, 2 (2003).
Autor Principal: Dong-Won Kim
Formato: Artigo
Idioma:English
Subjects:
EEPROM.
MIS memory structure.
SiGe dot floating gate memory device.
Charge retention characteristics.
Charge transport characteristics reduction.
Charging voltage.
Discharge behavior.
High-k dielectric tunneling oxide.
Low write voltage.
Quantum dot.
Retention time improvement.
ZrO2 tunneling oxide.
ZrO2-SiGe.