Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.
We have demonstrated the effects of charging voltage and the charge retention characteristics in silicon-germanium dots with ZrO2 tunneling oxide. Using the ZrO2 high-k dielectric tunneling oxide, we achieved a low write voltage and improved retention time as compared to the SiGe dots with a SiO2 t...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 2 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |