On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche.

The reverse recovery destruction limit of 3.3 kV fast recovery diodes was investigated by measurements and device simulations. Based on a good agreement between the measured destruction limit and current filamentation in simulations, it is proposed that the destruction is triggered by the onset of i...

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on electron devices 50, 2 (2003).
1. Verfasser:	Domeij, M.
Format:	Artikel
Sprache:	English
Schlagworte:	3.3 kV. HV fast recovery diodes. SOA limit. Si. Si power diodes. Approximate analytical model. Current filamentation. Destruction mode. Device simulations. Dynamic avalanche. Impact ionization. N-base width. Nondestructive reverse recovery. Reverse peak voltage. Reverse recovery destruction limit. Reverse recovery safe operating area. N-n+ junction.