A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.

Devices that combine single-electron and metal-oxide-semiconductor (MOS) transistors are newly proposed as basic components of multiple-valued (MV) logic, such as a universal literal gate and a quantizer. We verified their operation using single-electron and MOS transistors fabricated on the same wa...

Full description

Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Inokawa, H.
Format:	Article
Language:	English
Subjects:	ADC. LSI. MOS transistor. SET-MOSFET hybrid circuits. Analog-to-digital converter. Combined SET/MOSFET. Large-scale integrated circuits. Multiple-valued SRAM. Multiple-valued adder. Multiple-valued logic. Multiple-valued memory. Pattern-dependent oxidation. Quantizer. Single-electron transistor. Static random-access memory. Universal literal gate.