Impact ionization measurements and modeling for power PHEMT.

A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...

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Pubblicato in:	IEEE Transactions on electron devices 50, 2 (2003).
Autore principale:	Baksht, T.
Natura:	Articolo
Lingua:	English
Soggetti:	High breakdown voltages. High electron mobility transistors. High output power. Impact ionization current. Impact ionization measurements. Impact ionization modeling. Layout parameters. Mapping measurement technique. Optimal gate-to-drain distance. Optimum lateral layout. Optimum vertical structure. Power PHEMT. Power performance optimization. Pseudomorphic HEMTs. Safe transistor operation region. Statistical approach. Temperature-dependent electrical measurements.