Impact ionization measurements and modeling for power PHEMT.

A systematic study of impact ionization in pseudomorphic high electron mobility transistors (PHEMTs) has been carried out using temperature-dependent electrical measurements as well as modeling for optimizing the power performance of the devices through the best layout parameters. A measurement proc...

Description complète

Détails bibliographiques
Publié dans:	IEEE Transactions on electron devices 50, 2 (2003).
Auteur principal:	Baksht, T.
Format:	Article
Langue:	English
Sujets:	High breakdown voltages. High electron mobility transistors. High output power. Impact ionization current. Impact ionization measurements. Impact ionization modeling. Layout parameters. Mapping measurement technique. Optimal gate-to-drain distance. Optimum lateral layout. Optimum vertical structure. Power PHEMT. Power performance optimization. Pseudomorphic HEMTs. Safe transistor operation region. Statistical approach. Temperature-dependent electrical measurements.