Development of high-current 4H-SiC ACCUFET.

Development of high-current 4H-SiC ACCUFET.

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Planar 4H-SiC accumulation channel field effect transistor (ACCUFET) have been designed, fabricated, and characterized. Detailed design and processing experiments were conducted on relatively large area ACCUFETs to boost their power ratings. A detailed two-dimensional (2-D) design simulation suggest...

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Détails bibliographiques
Publié dans:IEEE Transactions on electron devices 50, 2 (2003).
Auteur principal: Singh, R.
Format: Article
Langue:English
Sujets:
0.9 to 1.5 V.
2 A.
20 A.
2D design simulation.
30 to 200 C.
4 micron.
550 V.
MOSFET power switch.
N-rich post gate oxidation anneals.
SiC.
Design optimization.
Epitaxial regrowth.
Hex-gate design.
High accumulation layer mobility.
High-current 4H-SiC ACCUFET.
High-current devices.
On-resistance.
Optimum spacing.
Optimum threshold voltage.
Oxide processing.
Planar accumulation channel FET.
Power MOS-based devices.
Power ratings.
Stable high temperature characteristics.
N2O.
N2O annealed samples.
Adjacent p+ regions.
Ion implanted p+ base region.