Development of high-current 4H-SiC ACCUFET.
Planar 4H-SiC accumulation channel field effect transistor (ACCUFET) have been designed, fabricated, and characterized. Detailed design and processing experiments were conducted on relatively large area ACCUFETs to boost their power ratings. A detailed two-dimensional (2-D) design simulation suggest...
| 出版年: | IEEE Transactions on electron devices 50, 2 (2003). |
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| 第一著者: | |
| フォーマット: | 論文 |
| 言語: | English |
| 主題: |