A compact analytical model for asymmetric single-electron tunneling transistors.

Analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed. The model is based on the steady-state master equation, takes only the two most-probable charging states into acc...

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Библиографические подробности
Опубликовано в::IEEE Transactions on electron devices 50, 2 (2003).
Главный автор: Inokawa, H.
Формат: Статья
Язык:English
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