A compact analytical model for asymmetric single-electron tunneling transistors.

A compact analytical model for asymmetric single-electron tunneling transistors.

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Analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed. The model is based on the steady-state master equation, takes only the two most-probable charging states into acc...

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Bibliografski detalji
Izdano u:IEEE Transactions on electron devices 50, 2 (2003).
Glavni autor: Inokawa, H.
Format: Članak
Jezik:English
Teme:
Coulomb island charge.
Coulomb staircase.
Asymmetric SETT.
Asymmetric single-electron tunneling transistors.
Capacitance parameters.
Compact analytical model.
Drain current-drain voltage characteristic.
Drain current-gate voltage characteristics skew.
Resistance parameters.
Source/drain junctions.
Steady-state master equation.