Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

p-Si/n-Si1-yCy/p-Si heterojunction bipolar transistors with varying carbon fractions in the base were grown by rapid thermal chemical vapor deposition (RTCVD), to better understand the potential of Si1-yCy in enhancing the performance of Si-based bipolar technology. The band line-up issues which mak...

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Podrobná bibliografie
Vydáno v:IEEE Transactions on electron devices 50, 2 (2003).
Hlavní autor: Singh, D.V
Médium: Článek
Jazyk:English
Témata:
RTCVD.
Si-SiC-Si.
Si-based bipolar technology.
Bandgap narrowing.
Bandgap reduction.
Chemical vapor deposition.
Collector current.
Density of states reduction.
Electronic properties.
Energy bandgap offset.
Heavy doping.
Minority carrier recombination lifetime.
P-n-p HBT.
Rapid thermal CVD.
Temperature dependent measurements.
Si/Si1-yCy material system.
p-Si/n-Si1-yCy/p-Si HBTs.