Monte Carlo simulation and measurement of nanoscale n-MOSFETs.

Monte Carlo simulation and measurement of nanoscale n-MOSFETs.

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacita...

詳細記述

書誌詳細
出版年:IEEE Transactions on electron devices 50, 2 (2003).
第一著者: Bufler, F.M
フォーマット: 論文
言語:English
主題:
40 nm.
60 nm.
C-V measurements.
SIMS.
Si.
Analytic-band Monte Carlo simulation.
Capacitance-voltage measurements.
Channel velocity profiles.
Drift velocity.
Full-band Monte Carlo simulations.
Nanoscale n-MOSFETs.
Nonlinear regime.
Nonlinear transport.
On-current.
Output characteristics.
Process simulation.
Quasiballistic transport.
Secondary ion mass spectroscopy.
Source-side velocity.