Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

This paper presents a simple, physics-based, and continuous model for the quantum effects and polydepletion in deep-submicrometer MOSFETs with very thin gate oxide thicknesses. This analytical design-oriented MOSFET model correctly predicts inversion and depletion charges, transcapacitances, and dra...

Полное описание

Библиографические подробности
Опубликовано в::	IEEE Transactions on electron devices 50, 2 (2003).
Главный автор:	Lallement, C.
Формат:	Статья
Язык:	English
Предметы:	Si. Compact modeling. Continuous model. Deep-submicron MOSFETs. Design-oriented MOSFET model. Drain current. Electrical parameters. Nonsaturation. Physical device parameters. Physics-based model. Polydepletion. Polysilicon depletion. Polysilicon doping concentration. Quantum effects. Saturation. Strong inversion. Transcapacitances. Very thin gate oxide thicknesses. Weak inversion.