Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model.

This paper presents a simple, physics-based, and continuous model for the quantum effects and polydepletion in deep-submicrometer MOSFETs with very thin gate oxide thicknesses. This analytical design-oriented MOSFET model correctly predicts inversion and depletion charges, transcapacitances, and dra...

Descrizione completa

Dettagli Bibliografici
Pubblicato in:IEEE Transactions on electron devices 50, 2 (2003).
Autore principale: Lallement, C.
Natura: Articolo
Lingua:English
Soggetti:
Si.
Compact modeling.
Continuous model.
Deep-submicron MOSFETs.
Design-oriented MOSFET model.
Drain current.
Electrical parameters.
Nonsaturation.
Physical device parameters.
Physics-based model.
Polydepletion.
Polysilicon depletion.
Polysilicon doping concentration.
Quantum effects.
Saturation.
Strong inversion.
Transcapacitances.
Very thin gate oxide thicknesses.
Weak inversion.