Lallement, C. Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. IEEE Transactions on electron devices.
शिकागो शैली (17वां संस्करण) प्रशस्ति पत्रLallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices .
एमएलए (9वां संस्करण) प्रशस्ति पत्रLallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices, .
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