Lallement, C. Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. IEEE Transactions on electron devices.
Citace podle Chicago (17th ed.)Lallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices .
Citace podle MLA (9th ed.)Lallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices, .
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