Cita APA

Lallement, C. Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model. IEEE Transactions on electron devices.

Citación estilo Chicago

Lallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices .

Cita MLA

Lallement, C. "Accounting for Quantum Effects and Polysilicon Depletion from Weak to Strong Inversion in a Charge-based Design-oriented MOSFET Model." IEEE Transactions on Electron Devices, .