Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.
The surface electron mobility of HfO2 NMOSFETs with a polysilicon gate electrode was studied in terms of the effects of high-temperature forming gas (FG) annealing. The high-temperature FG annealing significantly improved the drive current or the surface electron mobility of the NMOSFETs. Improvemen...
में प्रकाशित: | IEEE Transactions on electron devices 50, 2 (2003). |
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मुख्य लेखक: | |
स्वरूप: | लेख |
भाषा: | English |
विषय: |