A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. This technique provides a unit cell with 2.3∼2.4 μm pitch and a channel d...

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发表在:IEEE Transactions on electron devices 50, 2 (2003).
主要作者: Jongdae Kim
格式: 文件
语言:English
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