A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.
A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. This technique provides a unit cell with 2.3∼2.4 μm pitch and a channel d...
| 出版年: | IEEE Transactions on electron devices 50, 2 (2003). |
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| 第一著者: | |
| フォーマット: | 論文 |
| 言語: | English |
| 主題: |