A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.
A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. This technique provides a unit cell with 2.3∼2.4 μm pitch and a channel d...
| הוצא לאור ב: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| מחבר ראשי: | |
| פורמט: | Article |
| שפה: | English |
| נושאים: |