A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.

A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. This technique provides a unit cell with 2.3∼2.4 μm pitch and a channel d...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Jongdae Kim
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
10 V.
2.3 to 2.4 micron.
43 V.
5 A.
Blocking voltage.
Cell density.
Channel density.
Cost-effective production capability.
Current driving capability.
Gate oxide time to breakdown.
Gate voltage.
High reliability trench DMOSFETs.
Hydrogen annealing.
Mask layers.
Self-align technique.
Source-to-drain current.
Specific on-resistance.
Trench surface.
Unit cell.