Hot-hole-induced dielectric breakdown in LDMOS transistors.

A novel failure mechanism in an n-channel lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor biased in the saturation mode is investigated. A correlation between time-to-breakdown and hot hole gate current is established and the static safe operating area (SOA), limited by hot-hole...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on electron devices 50, 2 (2003).
1. Verfasser:	Labate, L.
Format:	Artikel
Sprache:	English
Schlagworte:	HV devices. Dynamic mode. Electrical parameters. Failure mechanism. Gate oxide. High-voltage devices. Hot hole gate current. Hot hole injection. Hot-hole-induced dielectric breakdown. Lateral double-diffused MOS transistor. N-channel LDMOS transistor. Periodic mode. Prebreakdown degradation. Saturation mode. Static SOA. Static safe operating area. Time-to-breakdown.