Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.

Detail studies of the optical and electrical low-frequency noise spectra and their correlation factor of graded-index separate-confinement-heterostructure, multiple-quantum-well (MQW) strained-layer Fabry-Perot (FP) InGaAsP/InP laser diodes have been carried out. It is shown that at defined DC curre...

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Bibliografiske detaljer
Udgivet i:	IEEE Transactions on electron devices 50, 2 (2003).
Hovedforfatter:	Palenskis, V.
Format:	Article
Sprog:	English
Fag:	GRINSCH MQW structures. InGaAsP Fabry-Perot laser diodes. InGaAsP-InP. InGaAsP/InP laser diodes. Lorentzian-type electrical noise peaks. Lorentzian-type optical noise peaks. Activation energy. Charge carrier confinement. Correlation factor. Diode terminal voltage. Electrical LF noise spectra. Graded-index separate confinement heterostructure. Laser diode mirrors. Laser facet coating. Light output power. Mode-hopping effect. Multiple quantum well LDs. Noise properties. Optical noise spectra. Photon confinement. Semiconductor lasers. Thin dielectric layer.