Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (∼1.7%) in Zr-oxynitride was primarily located at the Zr-oxynitride/Si interface and helped to preserve the composition of the nitrogen-doped Zr-silicate in...

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Pubblicato in:	IEEE Transactions on electron devices 50, 2 (2003).
Autore principale:	Nieh, R.E
Natura:	Articolo
Lingua:	English
Soggetti:	10.3 A. 11.6 A. 600 C. N-doped Zr-silicate interfacial layer. TDDB characteristics. TaN-ZrON-Si. TaN-gated nMOSFET fabrication. TaN/Zr-oxynitride nMOSFETs. Zr-oxynitride gate dielectrics. Zr-oxynitride/Si interface. Crystallization temperature. Dielectric strength. Effective breakdown field. Electrical characteristics. Equivalent oxide thickness. High-temperature forming gas annealing. Material characteristics. Mobility improvement. Off-state leakage current reduction. Reliability characteristics. Thermal stability. Time-dependent dielectric breakdown characteristics. Time-zero dielectric breakdown characteristics. Transconductance. ZrOxNy gate dielectrics.