Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.
The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (∼1.7%) in Zr-oxynitride was primarily located at the Zr-oxynitride/Si interface and helped to preserve the composition of the nitrogen-doped Zr-silicate in...
| में प्रकाशित: | IEEE Transactions on electron devices 50, 2 (2003). |
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| मुख्य लेखक: | |
| स्वरूप: | लेख |
| भाषा: | English |
| विषय: |