Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

The electrical, material, and reliability characteristics of zirconium oxynitride (Zr-oxynitride) gate dielectrics were evaluated. The nitrogen (∼1.7%) in Zr-oxynitride was primarily located at the Zr-oxynitride/Si interface and helped to preserve the composition of the nitrogen-doped Zr-silicate in...

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Vydáno v:IEEE Transactions on electron devices 50, 2 (2003).
Hlavní autor: Nieh, R.E
Médium: Článek
Jazyk:English
Témata:
10.3 A.
11.6 A.
600 C.
N-doped Zr-silicate interfacial layer.
TDDB characteristics.
TaN-ZrON-Si.
TaN-gated nMOSFET fabrication.
TaN/Zr-oxynitride nMOSFETs.
Zr-oxynitride gate dielectrics.
Zr-oxynitride/Si interface.
Crystallization temperature.
Dielectric strength.
Effective breakdown field.
Electrical characteristics.
Equivalent oxide thickness.
High-temperature forming gas annealing.
Material characteristics.
Mobility improvement.
Off-state leakage current reduction.
Reliability characteristics.
Thermal stability.
Time-dependent dielectric breakdown characteristics.
Time-zero dielectric breakdown characteristics.
Transconductance.
ZrOxNy gate dielectrics.