Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on electron devices 50, 2 (2003).
1. Verfasser:	Tsung-Hsing Yu
Format:	Artikel
Sprache:	English
Schlagworte:	GaN-AlGaN. GaN-AlGaN HEMT. GaN-AlGaN heterointerface. MODFETs. Current-voltage characteristics. Cutoff frequency. Material composition. Nonlinear model. Nonlinear polarization model. Quasi-2D model. Quasi-two-dimensional model. Sheet carrier density. Strain polarization fields. Theoretical model. Transconductance.