Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.

We present a theoretical model of an AlGaN-GaN high electron mobility field effect transistor (HEMT) that includes a nonlinear model of the strain polarization fields produced at the heterointerface. Recent experimental work has indicated that the macroscopic polarization in III-nitride alloys is a...

पूर्ण विवरण

ग्रंथसूची विवरण
में प्रकाशित:	IEEE Transactions on electron devices 50, 2 (2003).
मुख्य लेखक:	Tsung-Hsing Yu
स्वरूप:	लेख
भाषा:	English
विषय:	GaN-AlGaN. GaN-AlGaN HEMT. GaN-AlGaN heterointerface. MODFETs. Current-voltage characteristics. Cutoff frequency. Material composition. Nonlinear model. Nonlinear polarization model. Quasi-2D model. Quasi-two-dimensional model. Sheet carrier density. Strain polarization fields. Theoretical model. Transconductance.