Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...
Xuất bản năm: | IEEE Transactions on electron devices 50, 2 (2003). |
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Tác giả chính: | |
Định dạng: | Bài viết |
Ngôn ngữ: | English |
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