Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.

We eliminated kink phenomena and Ids hysteresis in a double-doped InP-based HEMT without degrading its frequency performance by fabricating direct ohmic contacts in the InGaAs channel. A direct ohmic structure lets us control current paths in the device and relax the electric field at the recess edg...

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Опубликовано в::	IEEE Transactions on electron devices 50, 2 (2003).
Главный автор:	Sawada, K.
Формат:	Статья
Язык:	English
Предметы:	I-V characteristic hysteresis. Ids hysteresis. InGaAs. InGaAs channel. InP. InP-based HEMT. MODFET. Ni-AuGe-Au. Direct ohmic structure. Double-doped HEMT. Drain current hysteresis elimination. High electric field region. Hole current reduction. Hole trap mechanism. Impact ionization suppression. Kink phenomena elimination.