Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

This work demonstrates that the "purity", meaning the low density of electron traps in a semi-insulating (SI) SiC substrate, can be crucial for the electrical characteristics of 4H-SiC MESFETs. Structures realized on two types of SI substrates have been investigated. The first kind is vana...

詳細記述

書誌詳細
出版年:IEEE Transactions on electron devices 50, 2 (2003).
第一著者: Sghaier, N.
フォーマット: 論文
言語:English
主題: