Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.

This work demonstrates that the "purity", meaning the low density of electron traps in a semi-insulating (SI) SiC substrate, can be crucial for the electrical characteristics of 4H-SiC MESFETs. Structures realized on two types of SI substrates have been investigated. The first kind is vana...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 2 (2003).
Päätekijä: Sghaier, N.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
1.05 eV.
4H-SiC MESFETs.
Id-Vds measurements.
SiC.
SiC:V.
V doped substrates.
Deep traps.
Drain-source output conductance.
Electrical characteristics.
Frequency dispersion measurements.
High temperature CVD technique.
Low V content substrates.
Low electron trap density.
Parasitic effects.
Physical vapor transport sublimation technique.
Semi-insulating SiC substrate.
Static output characteristics.
Substrate purity dependence.
Transconductance.
Transistors.
Trap localization.
Trapping phenomenon.