Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.
芝加哥风格引文Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .
MLA引文Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .
警告：这些引文格式不一定是100％准确.