APA引文

Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.

Chicago Style (17th ed.) Citation

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .

MLA引文

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .

警告：這些引文格式不一定是100％准確.