APA (7e ed.) Bronvermelding

Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.

Chicago (17e ed.) Bronvermelding

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .

MLA (9e ed.) Bronvermelding

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .

Let op: Deze citaties zijn niet altijd 100% accuraat.