Cita APA

Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.

Citación estilo Chicago

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .

Cita MLA

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .

Warning: These citations may not always be 100% accurate.