Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.
Chicago-viite (17. p.)Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .
MLA-viite (9. p.)Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .
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