Παραπομπή σε μορφή APA (7η εκδ.)

Sghaier, N. Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity. IEEE Transactions on electron devices.

Παραπομπή σε μορφή Chicago (17η εκδ.)

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices .

Παραπομπή σε μορφή MLA (9th εκδ.)

Sghaier, N. "Study of Trapping Phenomenon in 4H-SiC MESFETs: Dependence on Substrate Purity." IEEE Transactions on Electron Devices, .