Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.

Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, in a case with relatively high densities...

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Опубликовано в::	IEEE Transactions on electron devices 50, 2 (2003).
Главный автор:	Mitani, Y.
Формат:	Статья
Язык:	English
Предметы:	2D analysis. GaAs. GaAs MESFETs. Breakdown characteristics. Breakdown voltage. Gate-lag phenomena. Impact ionization. Narrowly recessed gate FETs. Physical model. Potential profiles. Recess structures. Surface states. Two-dimensional analysis.