Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly fro...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 2 (2003). |
|---|---|
| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |