Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly fro...
| Опубликовано в:: | IEEE Transactions on electron devices 50, 2 (2003). |
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| Главный автор: | |
| Формат: | Статья |
| Язык: | English |
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