Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.

The dependence of the strain-induced on-current improvement in n-MOSFETs on scaling and the crystallographic orientation of the channel is investigated by self-consistent full-band Monte Carlo simulation. For a channel orientation along the <110> direction, the enhancement decreases weakly fro...

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Detaylı Bibliyografya
Yayımlandı:IEEE Transactions on electron devices 50, 2 (2003).
Yazar: Bufler, F.M
Materyal Türü: Makale
Dil:English
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