APA (7th ed.) Citation

Bufler, F. Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. IEEE Transactions on electron devices.

Chicago Style (17th ed.) Citation

Bufler, F.M. "Scaling of Strained-Si N-MOSFETs into the Ballistic Regime and Associated Anisotropic Effects." IEEE Transactions on Electron Devices .

MLA (9th ed.) Citation

Bufler, F.M. "Scaling of Strained-Si N-MOSFETs into the Ballistic Regime and Associated Anisotropic Effects." IEEE Transactions on Electron Devices, .