Bufler, F. Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. IEEE Transactions on electron devices.
Citace podle Chicago (17th ed.)Bufler, F.M. "Scaling of Strained-Si N-MOSFETs into the Ballistic Regime and Associated Anisotropic Effects." IEEE Transactions on Electron Devices .
Citace podle MLA (9th ed.)Bufler, F.M. "Scaling of Strained-Si N-MOSFETs into the Ballistic Regime and Associated Anisotropic Effects." IEEE Transactions on Electron Devices, .
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