A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors.

The thermal behavior of abrupt heterojunction bipolar transistors (HBTs) has been studied by coupling the thermionic-field-emission injection mechanism at the emitter-base heterojunction with the thermal-electric feedback phenomenon. The exact quantum mechanical injection mechanism rather than the s...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 2 (2003).
Main Author:	Anwar, A.F.M
Format:	Article
Language:	English
Subjects:	Abrupt HBTs. Abrupt heterojunction bipolar transistors. Bias-dependent current partitioning. Current collapse phenomenon. Emitter-base heterojunction. Exact quantum mechanical injection mechanism. High power levels. Multifinger HBTs. Nonuniform current distribution. Nonuniform temperature distribution. Self-consistent model. Single emitter finger HBTs. Temperature-dependent current partitioning. Thermal behavior. Thermal-electric feedback phenomenon. Thermionic current component. Thermionic-field-emission injection mechanism. Tunneling current component.