Renormalization group meshes and the discretization of TCAD equations.

This paper presents a new method to discretize the equations for the physical modeling of semiconductor devices and back-end patterns. The method assembles planes in two dimensions and cubes in three dimensions and allows for adaptive meshing without the occurrence of spurious nodes due to mesh smoo...

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Bibliographic Details

Published in:	IEEE Transactions on computer-aided design of integrated circuits and systems 21, 12 (2002).
Main Author:	Schoenmaker, W.
Format:	Article
Language:	English
Subjects:	TCAD equation. Adaptive meshing. Back-end pattern. Cube assembling method. Discretization. Mesh smoothing. Microelectronic device design. Physical model. Renormalization group mesh. Semiconductor device.