A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor.
The prediction of a simple lumped representation of heat sharing through emitter interconnect in high-power multiemitter bipolar devices is compared to numerical thermal simulation and found to exhibit nonphysical results. Using numerical simulation, interfinger metal heat flow is characterized qual...
| 发表在: | IEEE Transactions on computer-aided design of integrated circuits and systems 22, 1 (2003). |
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| 格式: | 文件 |
| 语言: | English |
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