A simplified model for the effect of interfinger metal on maximum temperature rise in a multifinger bipolar transistor.
The prediction of a simple lumped representation of heat sharing through emitter interconnect in high-power multiemitter bipolar devices is compared to numerical thermal simulation and found to exhibit nonphysical results. Using numerical simulation, interfinger metal heat flow is characterized qual...
| में प्रकाशित: | IEEE Transactions on computer-aided design of integrated circuits and systems 22, 1 (2003). |
|---|---|
| मुख्य लेखक: | |
| स्वरूप: | लेख |
| भाषा: | English |
| विषय: |