A new role for e-beam electron projection.

In the Scalpel system, a wide beam of electrons replaces light as the means of wafer exposure, and throughput is aided by a step-and-scan approach. One of the leading candidates for next generation lithography is Scalpel, which stands for scattering with angular limitation projection electron-beam l...

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Bibliographic Details
Published in:	IEEE spectrum 36, 7 (1999).
Main Author:	Harriott, L.R
Format:	Article
Language:	English
Subjects:	Scalpel system. Back-focal plane aperture. Contrast generation. Diffraction limitation. E-beam. Electron projection. Electron scattering characteristics. Energy absorption. High atomic number membrane. High-contrast aerial image. Low atomic number membrane. Membrane. Optical lithography. Patterned layer. Patterned material. Projection optics. Reduction image-projection technique. Scattering with angular limitation projection electron-beam lithography. Step-and-scan approach. Strongly scattered electrons. Thermal instabilities. Wafer plane.