Magnetoelectronic memories last and last.

Nonvolatile RAMs built with thin films of ferromagnetic material are poised to challenge dynamic and nonvolatile memories based on conventional semiconductors. At the root of the excitement are electronic devices with a ferromagnetic component that lets them not only switch between two stable states...

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Detalhes bibliográficos

Publicado no:	IEEE spectrum 37, 2 (2000).
Autor principal:	Johnson, M.
Formato:	Artigo
Idioma:	English
Assuntos:	All-metal spin transistors. All-metal spin valves. Electronic devices. Fast random-access memory. Ferromagnetic thin films. Hybrid ferromagnet semiconductor structures. Magnetic tunnel junctions. Magnetoelectronic devices. Magnetoelectronic memories. Nonvolatile RAM. Stable states switching. Storage cells.